(Energy Engineering)
by Fei Wang (Author), Zheyu Zhang (Author), Edward A. Jones (Author)
At the heart of modern power
electronics converters are power semiconductor switching devices. The
emergence of wide bandgap (WBG) semiconductor devices, including silicon
carbide and gallium nitride, promises power electronics converters with
higher efficiency, smaller size, lighter weight, and lower cost than
converters using the established silicon-based devices. However, WBG
devices pose new challenges for converter design and require more
careful characterization, in particular due to their fast switching
speed and more stringent need for protection.
Characterization of Wide Bandgap Power Semiconductor Devices
presents comprehensive methods with examples for the characterization
of this important class of power devices. After an introduction, the
book covers pulsed static characterization; junction capacitance
characterization; fundamentals of dynamic characterization; gate drive
for dynamic characterization; layout design and parasitic management;
protection design for double pulse test; measurement and data processing
for dynamic characterization; cross-talk consideration; impact of
three-phase system; and topology considerations.
